single igbtmod? hvigbt module 200 amperes/6500 volts CM200HG-130H powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 1 8 /05 outline drawing and circuit diagram d a e b l (2 pla ces) j c k (4 pla ces) det ail a det ail a det ail b det ail b h f g m v x y h w q s r t v u n p z aa cc bb bb dd dimensions inches millimeters a 5.51 140.0 b 2.87 73.0 c 1.89+0.04/-0.0 48.0+1.0/-0.0 d 4.88 124.0 e 2.24 57.0 f 0.85 21.6 g 0.51 12.9 h 0.20 5.0 j 1.73 44.0 k m6 metric m6 l m8 metric m8 m 0.64 16.2 n 1.59 40.4 p 1.10 28.0 description: powerex igbtmod? modules are designed for use in switching applications. each module consists of one igbt transistor in a reverse-connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simpli?ed system assembly and thermal management. features: low drive power low v ce(sat) super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: traction medium voltage drives high voltage power supplies ordering information: example: select the complete part module number you desire from the table below -i.e. CM200HG-130H is a 6500v (v ces ), 200 ampere single igbtmod? power module. type current rating v ces amperes volts (x 50) cm 200 130 dimensions inches millimeters q 1.44 36.5 r 0.22 5.5 s 0.16 4.0 t 0.68 17.4 u 1.61 41.0 v 0.24 6.0 w 2.44 62.0 x 0.47 12.0 y 0.14 3.5 z 0.11 2.8 aa 0.06 1.6 bb 0.02 0.5 cc 0.05 dia. 1.2 dia. dd 10 10
CM200HG-130H single igbtmod? hvigbt module 200 amperes/6500 volts powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 2 8 /05 absolute maximum ratings, t j = 25 c unless otherwise speci?ed ratings symbol CM200HG-130H units junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c operating temperature t opr -40 to 125 c collector-emitter voltage (v ge = 0v, t j = -40c) v ces 5800 volts collector-emitter voltage (v ge = 0v, t j = +25c) v ces 6300 volts collector-emitter voltage (v ge = 0v, t j = +125c) v ces 6500 volts gate-emitter voltage (v ce = 0v) v ges 20 volts collector current (dc, t c = 80c) i c 200 amperes peak collector current (pulse) i cm 400* amperes emitter current** (t c = 25c) i e 200 amperes emitter surge current** (pulse) i em 400* amperes maximum collector dissipation (t c = 25c, igbt part, t j(max) 125c) p c 2900 watts partial discharge (v 1 = 6900 v rms , v 2 = 5100 v rms , 60 hz (acc. to iec 1287)) q pd 10 pc max. mounting torque m8 main terminal screws C 133 in-lb max. mounting torque m6 mounting screws C 53 in-lb module weight (typical) C 0.52 kg isolation voltage (charged part to baseplate, ac 60hz 1 min.) v iso 10200 volts maximum turn-off switching current C 400 amperes (v cc 4500v, v ge = 15v, r g(off) 72 , t j = 125c) short circuit capability, maximum pulse width C 10 s (v cc 4500v, v ge = 15v, r g(off) 72 , t j = 125c) maximum reverse recovery instantaneous power C 1200 kw (v cc 4500v, di e /dt 1000a/ s, t j = 125c) * pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t oprmax rating (125c). **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi).
CM200HG-130H single igbtmod? hvigbt module 200 amperes/6500 volts powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 3 8 /05 static electrical characteristics, t j = 25 c unless otherwise speci?ed characteristics symbol test conditions min. typ. max. units collector-cutoff current* i ces v ce = v ces , v ge = 0v, t j = 25c C C 3.0 ma v ce = v ces , v ge = 0v, t j = 125c C 10 30.0 ma gate-emitter threshold voltage v ge(th) i c = 20ma, v ce = 10v 5.0 6.0 7.0 volts gate leakage current i ges v ge = v ges , v ce = 0v C C 0.5 a collector-emitter saturation voltage v ce(sat) i c = 200a, v ge = 15v, t j = 25c C 5.1 C volts i c = 200a, v ge = 15v, t j = 125c C 5.0 C volts input capacitance c ies v ce = 10v, v ge = 0v, C 41.0 C nf output capacitance c oes f = 100khz, C 2.5 C nf reverse transfer capacitance c res t j = 25c C 0.7 C nf total gate charge q g v cc = 3600v, i c = 200a, v ge = 15v C 3.3 C c emitter-collector voltage** v ec i e = 200a, v ge = 0v, t j = 25c C 4.0 C volts i e = 200a, v ge = 0v, t j = 125c C 3.6 C volts turn-on delay time t d(on) v cc = 3600v, i c = 200a, C 1.2 C s turn-on rise time t r v ge1 = -v ge2 = 15v, r g(on) = 30 , C 0.35 C s turn-on switching energy e on t j = 125c, t off = 60 s, inductive load C 1.5 C j/p turn-off delay time t d(off) v cc = 3600v, i c = 200a, C 6.6 C s turn-off fall time 1 t f1 v ge1 = -v ge2 = 15v, C 0.5 C s turn-off fall time 2 t f2 r g(off) = 72 , C 3.3 C s turn-off switching energy e off t j = 125c, t off = 60 s, inductive load C 1.2 C j/p reverse recovery time 1** t rr1 v cc = 3600v, i e = 200a, C 1.0 C s reverse recovery time 2** t rr2 di e /dt = -670a/ s, C 2.4 C s reverse recovery charge** q rr t j = 125c, C 370 C c reverse recovery energy** e rec t off = 60 s, inductive load C 0.7 C j/p * pulse width and repetition rate should be such that device junction temperature rise is negligible. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). thermal characteristics, t j = 25 c unless otherwise speci?ed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) q per igbt C C 42.0 k/kw thermal resistance, junction to case r th(j-c) d per fwdi C C 66.0 k/kw contact thermal resistance, case to fin r th(c-f) per module, thermal grease applied C 18.0 C k/kw mechanical characteristics, t j = 25 c unless otherwise speci?ed characteristics symbol test conditions min. typ. max. units comparative tracking index cti C 600 C C C clearance C C 26.0 C C mm creepage distance C C 56.0 C C mm internal inductance l c-e(int) C C 54.0 ? h internal lead resistance r c-e(int) C C C C m
CM200HG-130H single igbtmod? hvigbt module 200 amperes/6500 volts powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 4 8 /05 collector current, i c , (amperes) output characteristics (typical) 400 800 0 2000 0 2 0 12 16 4 8 collector-emitter voltage, v ce(sat ) , (volts) t j = 25 c 1200 1600 v ge = 20v 18v 12v 13v 14v 15v 10v 16v 1 2 3 0 8 7 6 free-wheel diode forward characteristics (typical) 0 500 300 400 100 200 0 500 300 400 100 200 v ge = 0v t j = 25 c t j = 125 c 4 5 collector-emitter voltage, v ce s , (volts) emitter current, i e , (amperes) 0.2 0.4 0.6 0 1.2 1.0 free-wheel diode reverse recovery energy characteristics (typical) v cc = 3600v v ge = 15v r g(on) = 30 ? l s = 200nh t j = 125 c 0.8 0 500 300 400 100 200 0.2 0.4 0.6 0 1.2 1.0 v cc = 3600v v ge = 15v r g(on) = 30 ? l s = 200nh t j = 125 c 0.8 reverse recovery energy, e rec , (j/pulse) emitter current, i e , (amperes) 0.2 0.4 0 1.2 1.0 free-wheel diode reverse recovery energy characteristics (typical) 0 120 40 20 60 100 80 v cc = 3600v v ge = 15v i c = 200 a l s = 200nh t j = 125 c 0.6 0.8 0.2 0.4 0 1.2 1.0 0 120 40 20 60 100 80 v cc = 3600v v ge = 15v i c = 200 a l s = 200nh t j = 125 c 0.6 0.8 reverse recovery energy, e rec , (j/pulse) gate resistance, r g , ( ? ) g ate resistance, r g , ( ? ) free-wheel diode reverse recovery charge characteristics (typical) reverse recovery charge, q rr , (mc) emitter current, i e , (amperes) free-wheel diode reverse recovery charge characteristics (typical) reverse recovery charge, q rr , (mc) collector current, i c , (amperes) 10 5 0 2 0 15 gate-emitter voltage, v ge , (volts) transfer characteristics (typical) 0 500 4000 3500 3000 2000 1500 1000 2500 t j = 25 c t j = 125 c v ce = 20 v switching time, t d(on) , (s) turn-on delay time vs. collector current (typical) 10 1 10 0 10 -1 collector current, i c , (amperes) switching time, t d(off) , (s) turn-off delay time vs. collector current (typical) v cc = 3600v v ge = 15v r g(off) = 72 ? r g(on) = 30 ? l s = 200nh t j = 125 c v cc = 3600v v ge = 15v r g(off) = 72 ? r g(on) = 30 ? l s = 200nh t j = 125 c 10 1 10 3 10 2 10 1 10 0 10 -1 collector current, i c , (amperes) 10 1 10 3 10 2
CM200HG-130H single igbtmod? hvigbt module 200 amperes/6500 volts powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 5 8 /05 collector current, i c , (amperes) switching time, t f , (ms) fall time vs. collector current (typical) collector current, i c , (amperes) switching time, t r , (ms) rise time vs. collector current (typical) 4.0 2.5 2.0 1.5 3.0 3.5 1.0 0 0.5 500 300 400 200 100 collector current, i c , (amperes) switching loss, e of f , (j/pulse) switching loss (off) vs. collector current (typical) 0 collector current, i c , (amperes) switching loss, e on , (j/pulse) switching loss (on) vs. collector current (typical) switching loss, e of f , (j/pulse) gate resistance, r g , ( ? ) switching loss, e on , (j/pulse) gate resistance, r g , ( ? ) collect or-emitter volt ag e, v ce , (v ol ts) cap ac it ance, c ie s , c oe s , c res , (pf) 10 -1 10 0 10 1 10 2 capacitance vs. collector-emitter voltage (typical) 10 2 10 0 10 -1 10 1 c ie s c oe s c res v ge = 15v f = 100khz t j = 25c time, (s ) transient imped ance, rt h (j-c) 10 -3 10 -2 10 -1 10 0 10 1 transient thermal impedance characteristics (igbt & fwdi ) 1.2 1.0 0.4 0 0.2 0. 6 0.8 single pulse t c = 25 c igbt = r th(j-c) q = 42 k/kw fwdi = r th(j-c) d = 66 k/kw collector-emitter voltage, v ce s , (volts) collector current, i c , (amperes) collector-emitter saturation voltage characteristics (typical) v cc = 3600v v ge = 15v r g(off) = 72 ? r g(on ) = 30 ? l s = 200nh t j = 125 c 10 1 10 0 10 -1 10 1 10 3 10 2 v cc = 3600v v ge = 15v r g(off) = 72 ? r g(on ) = 30 ? l s = 200nh t j = 125 c v cc = 3600v v ge = 15v r g(off) = 72 ? r g(on ) = 30 ? l s = 200nh t j = 125 c 4.0 2.5 2.0 1.5 3.0 3.5 1.0 0 0.5 500 300 400 200 100 0 4.0 2.5 2.0 1.5 3.0 3.5 1.0 0 0.5 120 60 100 80 40 20 0 4.0 2.5 2.0 1.5 3.0 3.5 1.0 0 0.5 120 60 100 80 40 20 0 v cc = 3600v v ge = 15v r g(off) = 72 ? r g(on ) = 30 ? l s = 200nh t j = 125 c 8 5 4 3 6 7 2 0 1 500 300 400 200 100 0 v cc = 3600v v ge = 15v i c = 200 a l s = 200nh t j = 125 c v cc = 3600v v ge = 15v i c = 200 a l s = 200nh t j = 125 c 10 1 10 0 10 -1 10 1 10 3 10 2 v ge = 15v t j = 25 c t j = 125 c switching loss (off) vs. gate resistance (typical) switching loss (on) vs. gate resistance (typical)
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